IXXP50N60B3 vs IXXH50N60B3

Product Attributes

Part Number IXXP50N60B3 IXXH50N60B3
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXP50N60B3 IXXH50N60B3
Product Status Active Active
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 120 A 120 A
Current - Collector Pulsed (Icm) 200 A 200 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A 1.8V @ 15V, 36A
Power - Max 600 W 600 W
Switching Energy 670µJ (on), 1.2mJ (off) 670µJ (on), 740µJ (off)
Input Type Standard Standard
Gate Charge 70 nC 70 nC
Td (on/off) @ 25°C 27ns/150ns 27ns/100ns
Test Condition 360V, 36A, 5Ohm, 15V 360V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-247-3
Supplier Device Package TO-220-3 TO-247 (IXXH)