IXXH60N65B4H1 vs IXXH80N65B4H1

Product Attributes

Part Number IXXH60N65B4H1 IXXH80N65B4H1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH60N65B4H1 IXXH80N65B4H1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 116 A 160 A
Current - Collector Pulsed (Icm) 230 A 430 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A 2V @ 15V, 80A
Power - Max 380 W 625 W
Switching Energy 3.13mJ (on), 1.15mJ (off) 3.77mJ (on), 1.2mJ (off)
Input Type Standard Standard
Gate Charge 95 nC 120 nC
Td (on/off) @ 25°C 37ns/145ns 38ns/120ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 80A, 3Ohm, 15V
Reverse Recovery Time (trr) 150 ns 150 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)