IXXH75N60B3D1 vs IXXH75N60C3D1

Product Attributes

Part Number IXXH75N60B3D1 IXXH75N60C3D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH75N60B3D1 IXXH75N60C3D1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 160 A 150 A
Current - Collector Pulsed (Icm) 300 A 300 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 60A 2.3V @ 15V, 60A
Power - Max 750 W 750 W
Switching Energy 1.7mJ (on), 1.5mJ (off) 1.6mJ (on), 800µJ (off)
Input Type Standard Standard
Gate Charge 107 nC 107 nC
Td (on/off) @ 25°C 35ns/118ns 35ns/90ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-2
Supplier Device Package TO-247 (IXXH) TO-247AD