IXXH60N65C4 vs IXXH60N65B4

Product Attributes

Part Number IXXH60N65C4 IXXH60N65B4
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH60N65C4 IXXH60N65B4
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 118 A 116 A
Current - Collector Pulsed (Icm) 240 A 250 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 60A 2V @ 15V, 60A
Power - Max 455 W 455 W
Switching Energy 3.2mJ (on), 830µJ (off) 3.13mJ (on), 1.15mJ (off)
Input Type Standard Standard
Gate Charge 94 nC 95 nC
Td (on/off) @ 25°C 37ns/133ns 37ns/145ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)