IXXH40N65B4D1 vs IXXH40N65B4H1

Product Attributes

Part Number IXXH40N65B4D1 IXXH40N65B4H1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH40N65B4D1 IXXH40N65B4H1
Product Status Active Active
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 115 A 120 A
Current - Collector Pulsed (Icm) 225 A 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 2V @ 15V, 40A
Power - Max 455 W 455 W
Switching Energy 1.4mJ (on), 800µJ (off) 1.4mJ (on), 560µJ (off)
Input Type Standard Standard
Gate Charge 66 nC 77 nC
Td (on/off) @ 25°C 20ns/115ns 28ns/144ns
Test Condition 400V, 40A, 5Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 60 ns 120 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-2
Supplier Device Package TO-247 (IXTH) TO-247AD