IXXH80N65B4 vs IXXH40N65B4

Product Attributes

Part Number IXXH80N65B4 IXXH40N65B4
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH80N65B4 IXXH40N65B4
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 160 A 120 A
Current - Collector Pulsed (Icm) 430 A 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A 1.8V @ 15V, 40A
Power - Max 625 W 455 W
Switching Energy 3.77mJ (on), 1.2mJ (off) 1.4mJ (on), 560µJ (off)
Input Type Standard Standard
Gate Charge 120 nC 77 nC
Td (on/off) @ 25°C 38ns/120ns 28ns/144ns
Test Condition 400V, 80A, 3Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)