IXXH30N65B4 vs IXXH60N65B4

Product Attributes

Part Number IXXH30N65B4 IXXH60N65B4
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH30N65B4 IXXH60N65B4
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 65 A 116 A
Current - Collector Pulsed (Icm) 146 A 250 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A 2V @ 15V, 60A
Power - Max 230 W 455 W
Switching Energy 1.55mJ (on), 480µJ (off) 3.13mJ (on), 1.15mJ (off)
Input Type Standard Standard
Gate Charge 52 nC 95 nC
Td (on/off) @ 25°C 32ns/170ns 37ns/145ns
Test Condition 400V, 30A, 15Ohm, 15V 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)