IXXH30N60B3D1 vs IXXH50N60B3D1

Product Attributes

Part Number IXXH30N60B3D1 IXXH50N60B3D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH30N60B3D1 IXXH50N60B3D1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 120 A
Current - Collector Pulsed (Icm) 115 A 200 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 24A 1.8V @ 15V, 36A
Power - Max 270 W 600 W
Switching Energy 550µJ (on), 500µJ (off) 670µJ (on), 740µJ (off)
Input Type Standard Standard
Gate Charge 39 nC 70 nC
Td (on/off) @ 25°C 23ns/97ns 27ns/100ns
Test Condition 400V, 24A, 10Ohm, 15V 360V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)