IXXH100N60C3 vs IXXH150N60C3

Product Attributes

Part Number IXXH100N60C3 IXXH150N60C3
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH100N60C3 IXXH150N60C3
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 190 A 300 A
Current - Collector Pulsed (Icm) 380 A 150 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A 2.5V @ 15V, 150A
Power - Max 830 W 1360 W
Switching Energy 2mJ (on), 950µJ (off) 3.4mJ (on), 1.8mJ (off)
Input Type Standard Standard
Gate Charge 150 nC 200 nC
Td (on/off) @ 25°C 30ns/90ns 34ns/120ns
Test Condition 360V, 70A, 2Ohm, 15V 400V, 75A, 2Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-2
Supplier Device Package TO-247 (IXXH) TO-247AD