IXXH100N60C3 vs IXXH100N60B3

Product Attributes

Part Number IXXH100N60C3 IXXH100N60B3
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXXH100N60C3 IXXH100N60B3
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 190 A 220 A
Current - Collector Pulsed (Icm) 380 A 480 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A 1.8V @ 15V, 70A
Power - Max 830 W 830 W
Switching Energy 2mJ (on), 950µJ (off) 1.9mJ (on), 2mJ (off)
Input Type Standard Standard
Gate Charge 150 nC 143 nC
Td (on/off) @ 25°C 30ns/90ns 30ns/120ns
Test Condition 360V, 70A, 2Ohm, 15V 360V, 70A, 2Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 (IXXH) TO-247 (IXXH)