IXTZ550N055T2 vs IXTX550N055T2

Product Attributes

Part Number IXTZ550N055T2 IXTX550N055T2
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTZ550N055T2 IXTX550N055T2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 550A (Tc) 550A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 595 nC @ 10 V 595 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40000 pF @ 25 V 40000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 600W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package DE475 PLUS247™-3
Package / Case 6-SMD, Flat Leads TO-247-3 Variant