IXTY02N120P vs IXTY08N120P

Product Attributes

Part Number IXTY02N120P IXTY08N120P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTY02N120P IXTY08N120P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 75Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 33W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252AA TO-220-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3