IXTY01N100D vs IXTY01N100

Product Attributes

Part Number IXTY01N100D IXTY01N100
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTY01N100D IXTY01N100
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 110Ohm @ 50mA, 0V 80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id - 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs - 6.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 54 pF @ 25 V
FET Feature Depletion Mode -
Power Dissipation (Max) 1.1W (Ta), 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63