IXTV200N10T vs IXTV200N10TS

Product Attributes

Part Number IXTV200N10T IXTV200N10TS
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTV200N10T IXTV200N10TS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 550W (Tc) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PLUS220 PLUS-220SMD
Package / Case TO-220-3, Short Tab PLUS-220SMD