IXTY1R4N60P vs IXTU1R4N60P

Product Attributes

Part Number IXTY1R4N60P IXTU1R4N60P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTY1R4N60P IXTU1R4N60P
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V 5.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V 140 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252AA TO-251AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA