| Part Number | IXTY08N100P | IXTU08N100P |
|---|---|---|
| Manufacturer | IXYS | IXYS |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 500mA, 10V | - |
| Vgs(th) (Max) @ Id | 4V @ 50µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 42W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | Through Hole |
| Supplier Device Package | TO-252AA | TO-251AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |