IXTU05N120 vs IXTU05N100

Product Attributes

Part Number IXTU05N120 IXTU05N100
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTU05N120 IXTU05N100
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc) 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id - 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 7.8 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 40W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-251AA TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA