IXTU02N50D vs IXTY02N50D

Product Attributes

Part Number IXTU02N50D IXTY02N50D
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTU02N50D IXTY02N50D
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 30Ohm @ 50mA, 0V 30Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25µA -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 120 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc) 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-251AA TO-252AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63