IXTU01N100 vs IXTU01N100D

Product Attributes

Part Number IXTU01N100 IXTU01N100D
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTU01N100 IXTU01N100D
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc) 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 0V
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V 80Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 25µA 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V 120 pF @ 25 V
FET Feature - Depletion Mode
Power Dissipation (Max) 25W (Tc) 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-251AA TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA