IXTT75N10L2 vs IXTT75N20L2

Product Attributes

Part Number IXTT75N10L2 IXTT75N20L2
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTT75N10L2 IXTT75N20L2
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain (Id) @ 25°C 75A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 21mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 215 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 400W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-268AA -
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA -