IXTT1N300P3HV vs IXTT2N300P3HV

Product Attributes

Part Number IXTT1N300P3HV IXTT2N300P3HV
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTT1N300P3HV IXTT2N300P3HV
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V 3000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50Ohm @ 500mA, 10V 21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.6 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 895 pF @ 25 V 1890 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 155°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268HV (IXTT) TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA