IXTQ48N20T vs IXTQ98N20T

Product Attributes

Part Number IXTQ48N20T IXTQ98N20T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTQ48N20T IXTQ98N20T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 250W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3