IXTQ102N20T vs IXTQ102N25T

Product Attributes

Part Number IXTQ102N20T IXTQ102N25T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTQ102N20T IXTQ102N25T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 750W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3