IXTP2N60P vs IXTP7N60P

Product Attributes

Part Number IXTP2N60P IXTP7N60P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTP2N60P IXTP7N60P
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.1Ohm @ 1A, 10V 1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V 1080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 55W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3