IXTP60N10T vs IXTP80N10T

Product Attributes

Part Number IXTP60N10T IXTP80N10T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTP60N10T IXTP80N10T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V 3040 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 176W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3