IXTP3N50D2 vs IXTP6N50D2

Product Attributes

Part Number IXTP3N50D2 IXTP6N50D2
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTP3N50D2 IXTP6N50D2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 0V 500mOhm @ 3A, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5 V 96 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 25 V 2800 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 125W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3