IXTP02N120P vs IXTP08N120P

Product Attributes

Part Number IXTP02N120P IXTP08N120P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTP02N120P IXTP08N120P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 75Ohm @ 100mA, 10V 25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V 333 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 33W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3