IXTP08N100P vs IXTP05N100P

Product Attributes

Part Number IXTP08N100P IXTP05N100P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTP08N100P IXTP05N100P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V 30Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V 8.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V 196 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3