IXTK5N250 vs IXTN5N250

Product Attributes

Part Number IXTK5N250 IXTN5N250
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTK5N250 IXTN5N250
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500 V 2500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.8Ohm @ 2.5A, 10V 8.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8560 pF @ 25 V 8560 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 960W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC