IXTN200N10L2 vs IXTK200N10L2

Product Attributes

Part Number IXTN200N10L2 IXTK200N10L2
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTN200N10L2 IXTK200N10L2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 178A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V 540 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA