IXTK8N150L vs IXTN8N150L

Product Attributes

Part Number IXTK8N150L IXTN8N150L
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTK8N150L IXTN8N150L
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 4A, 20V 3.6Ohm @ 4A, 20V
Vgs(th) (Max) @ Id 8V @ 250µA 8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 15 V 250 nC @ 15 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V 8000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) 545W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC