IXTK120N25P vs IXTK120N25

Product Attributes

Part Number IXTK120N25P IXTK120N25
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTK120N25P IXTK120N25
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V 20mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 500µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 360 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V 7700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) 730W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 (IXTK) TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA