IXTH30N50P vs IXTH30N50

Product Attributes

Part Number IXTH30N50P IXTH30N50
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH30N50P IXTH30N50
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 15A, 10V 170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 227 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 25 V 5680 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 460W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3