IXTH1N200P3HV vs IXTH3N200P3HV

Product Attributes

Part Number IXTH1N200P3HV IXTH3N200P3HV
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH1N200P3HV IXTH3N200P3HV
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V 2000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V 8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V 1860 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247HV TO-247 (IXTH)
Package / Case TO-247-3 Variant TO-247-3