IXTH180N10T vs IXTC180N10T

Product Attributes

Part Number IXTH180N10T IXTC180N10T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH180N10T IXTC180N10T
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 480W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™
Package / Case TO-247-3 ISOPLUS220™