IXTH130N10T vs IXTH130N15T

Product Attributes

Part Number IXTH130N10T IXTH130N15T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH130N10T IXTH130N15T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V 12mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V 113 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5080 pF @ 25 V 9800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 750W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3