IXTH12N100 vs IXTH12N100Q

Product Attributes

Part Number IXTH12N100 IXTH12N100Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH12N100 IXTH12N100Q
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3