IXTH110N25T vs IXTC110N25T

Product Attributes

Part Number IXTH110N25T IXTC110N25T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTH110N25T IXTC110N25T
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V 27mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V 157 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 694W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™
Package / Case TO-247-3 ISOPLUS220™