IXTA36N30P vs IXTA36N30T

Product Attributes

Part Number IXTA36N30P IXTA36N30T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTA36N30P IXTA36N30T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V 110mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V 2250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB