IXTA4N80P vs IXTA2N80P

Product Attributes

Part Number IXTA4N80P IXTA2N80P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTA4N80P IXTA2N80P
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 14.2 nC @ 10 V 10.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB