IXTA1R4N100P vs IXTA1R4N120P

Product Attributes

Part Number IXTA1R4N100P IXTA1R4N120P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXTA1R4N100P IXTA1R4N120P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V 13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V 24.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 666 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 63W (Tc) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB