Part Number | IXTA1N100 | IXTA1N100P |
---|---|---|
Manufacturer | IXYS | IXYS |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Active |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000 V | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
Rds On (Max) @ Id, Vgs | 11Ohm @ 1A, 10V | 15Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 25µA | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | 15.5 nC @ 10 V |
Vgs (Max) | ±30V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | 331 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 54W (Tc) | 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | TO-263AA | TO-263AA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |