IXST30N60B2D1 vs IXST30N60BD1

Product Attributes

Part Number IXST30N60B2D1 IXST30N60BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXST30N60B2D1 IXST30N60BD1
Product Status Obsolete Obsolete
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 48 A 55 A
Current - Collector Pulsed (Icm) 90 A 110 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A 2.7V @ 15V, 55A
Power - Max 250 W 200 W
Switching Energy 550µJ (off) 1.5mJ (off)
Input Type Standard Standard
Gate Charge 50 nC 100 nC
Td (on/off) @ 25°C 30ns/130ns 30ns/150ns
Test Condition 400V, 24A, 5Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 30 ns 50 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA TO-268AA