IXSR40N60BD1 vs IXSR40N60CD1

Product Attributes

Part Number IXSR40N60BD1 IXSR40N60CD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSR40N60BD1 IXSR40N60CD1
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 70 A 62 A
Current - Collector Pulsed (Icm) 150 A 150 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A 2.5V @ 15V, 40A
Power - Max 170 W 210 W
Switching Energy 1.8mJ (off) 1mJ (off)
Input Type Standard Standard
Gate Charge 190 nC 190 nC
Td (on/off) @ 25°C 50ns/110ns 50ns/70ns
Test Condition 480V, 40A, 2.7Ohm, 15V 480V, 40A, 2.7Ohm, 15V
Reverse Recovery Time (trr) 35 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package ISOPLUS247™ ISOPLUS247™