IXSK80N60B vs IXSX80N60B

Product Attributes

Part Number IXSK80N60B IXSX80N60B
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSK80N60B IXSX80N60B
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 160 A 160 A
Current - Collector Pulsed (Icm) 300 A 300 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 80A 2.5V @ 15V, 80A
Power - Max 500 W 500 W
Switching Energy 4.2mJ (off) 4.2mJ (off)
Input Type Standard Standard
Gate Charge 240 nC 240 nC
Td (on/off) @ 25°C 60ns/140ns 60ns/140ns
Test Condition 480V, 80A, 2.7Ohm, 15V 480V, 80A, 2.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 Variant
Supplier Device Package TO-264AA(IXSK) PLUS247™-3