IXSK30N60BD1 vs IXSK50N60BD1

Product Attributes

Part Number IXSK30N60BD1 IXSK50N60BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSK30N60BD1 IXSK50N60BD1
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 55 A 75 A
Current - Collector Pulsed (Icm) 110 A 200 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 55A 2.5V @ 15V, 50A
Power - Max 200 W 300 W
Switching Energy 1.5mJ (off) 3.3mJ (off)
Input Type Standard Standard
Gate Charge 100 nC 167 nC
Td (on/off) @ 25°C 30ns/150ns 70ns/150ns
Test Condition 480V, 30A, 4.7Ohm, 15V 480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr) 50 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264AA(IXSK) TO-264AA(IXSK)