IXSH30N60B2D1 vs IXSH40N60B2D1

Product Attributes

Part Number IXSH30N60B2D1 IXSH40N60B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSH30N60B2D1 IXSH40N60B2D1
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 48 A 48 A
Current - Collector Pulsed (Icm) 90 A -
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A -
Power - Max 250 W -
Switching Energy 550µJ (off) -
Input Type Standard Standard
Gate Charge 50 nC -
Td (on/off) @ 25°C 30ns/130ns -
Test Condition 400V, 24A, 5Ohm, 15V -
Reverse Recovery Time (trr) 30 ns -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD