IXSH40N60B vs IXSH30N60B

Product Attributes

Part Number IXSH40N60B IXSH30N60B
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSH40N60B IXSH30N60B
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 75 A 55 A
Current - Collector Pulsed (Icm) 150 A 110 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A 2V @ 15V, 30A
Power - Max 280 W 200 W
Switching Energy 1.8mJ (off) 1.5mJ (off)
Input Type Standard Standard
Gate Charge 190 nC 100 nC
Td (on/off) @ 25°C 50ns/110ns 30ns/150ns
Test Condition 480V, 40A, 2.7Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD