IXSH35N100A vs IXSH35N140A

Product Attributes

Part Number IXSH35N100A IXSH35N140A
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSH35N100A IXSH35N140A
Product Status Obsolete Obsolete
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 1000 V 1400 V
Current - Collector (Ic) (Max) 70 A 70 A
Current - Collector Pulsed (Icm) 140 A 140 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A 4V @ 15V, 35A
Power - Max 300 W 300 W
Switching Energy 10mJ (off) 4mJ (off)
Input Type Standard Standard
Gate Charge 180 nC 120 nC
Td (on/off) @ 25°C 80ns/400ns 40ns/150ns
Test Condition 800V, 35A, 2.7Ohm, 15V 960V, 35A, 3Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD