IXSH30N60B vs IXSH30N60C

Product Attributes

Part Number IXSH30N60B IXSH30N60C
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSH30N60B IXSH30N60C
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 55 A 55 A
Current - Collector Pulsed (Icm) 110 A 110 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A 2.5V @ 15V, 30A
Power - Max 200 W 200 W
Switching Energy 1.5mJ (off) 700µJ (off)
Input Type Standard Standard
Gate Charge 100 nC 100 nC
Td (on/off) @ 25°C 30ns/150ns 30ns/90ns
Test Condition 480V, 30A, 4.7Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD